Integrating an electronic material that exhibits a strange property called negative capacitance can help high-power gallium nitride transistors break through a performance barrier, say scientists in ...

Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...

A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...

Researchers from Lawrence Berkeley National Laboratory developed an open-source 3D simulation framework capable of modeling the atomistic origins of negative capacitance in ferroelectric thin films at ...

In the ongoing quest to make electronic devices ever smaller and more energy efficient, researchers want to bring energy storage directly onto microchips, reducing the losses incurred when power is ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

Berkeley Lab scientists create microcapacitors with ultrahigh energy and power density. The microcapacitors are made with engineered thin films of hafnium oxide and zirconium oxide. The technology ...