Metal-Semiconductor Field-Effect Transistors (MESFETs) have long been pivotal in bridging fundamental semiconductor physics with high-performance electronic applications. As devices that combine metal ...
Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
Glasgow University researchers have led work that could lead to a new generation of diamond-based transistors for use in high-power electronics. The team has found a new way to use diamond as the ...
This application note presents the new 1600 V BIMOSFET transistor giving way to new applications. It presents the many applications of BIMOSFET and its DC electrical performance. This application note ...
Efficient Power Conversion Corporation announces the publication of a textbook designed to provide power system design engineers basic technical and application-focused information on how to design ...
Zetex Semiconductors pair of low-voltage PNP transistors feature low saturation voltages and high currents, serving as cost-effective switchers in a variety of slim-line portable applications. Zetex ...
Application of Graphene to High-Speed Transistors: Expectations and Challenges (17 pages) This paper is an excellent summary of the background and progress and challenges for using graphene for then ...
Lowell, MA — Tyco Electronics M/A-COM has announced a line-up of three high-power bipolar transistors designed for pulsed avionics and radar applications, ranging from 960 MHz to 1215 MHz. The ...
(Nanowerk Spotlight) On December 26, 1947, the two physicists Walter Brattain and John Bardeen, officially demonstrated the first point-contact transistor at Bell Labs. Later, in January 1948, William ...
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